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Product Description
Sirenza Microdevices' SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Gain & Return Loss
30 20 10 0 -10 -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 6
S11 S22 S21
SBA-5089
DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Product Features
* IP3 = 34.0dBm @ 1950MHz * Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz * Robust 1000V ESD, Class 1C * Operates From Single Supply * Patented Thermal Design
Applications
* PA Driver Amplifier * Cellular, PCS, GSM, UMTS * IF Amplifier * Wireless Data, Satellite Terminals
U nits dB dB m dB m dB m MHz dB dB dB V mA C /W 1950 MHz 1950 MHz 1950 MHz 4.5 72 14.0 9.0 Frequency 850 MHz 1950 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz 1950 MHz Min. 18.5 16.5 18.0 32.0 Typ. 20.0 18.0 19.7 19.5 36.0 34.0 13.0 4400 20.0 11.0 4.5 4.9 80 70 5.5 5.3 88 Max. 21.5 19.5
Symbol G P 1dB OIP3 POUT
Parameter Small Si gnal Gai n Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt Output Power @ -45dBc AC P IS-95 9 Forward C hannels
Bandwi dth D etermi ned by Return Loss (>10dB)
IRL ORL NF VD ID RTH, j-l
Input Return Loss Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead)
Test Conditions:
VS = 8 V RBIAS = 39 Ohms
ID = 80 mA Typ. TL = 25C
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
Performance tests and ratings for Sirenza Microdevices' products were performed internally by Sirenza and measured using specific computer systems and/or components and reflect the approximate performance of the products as measured by those tests. Any difference in circuit implementation, test software, or test equipment may affect actual performance. The information provided herein is believed to be reliable at press time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user's own risk. Prices and specifications for Sirenza Microdevices' products are subject to change without notice. Buyers should consult Sirenza Microdevices' standard terms and conditions of sale for Sirenza's limited warranty with regard to its products. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies
Frequency (MHz) Frequency (MHz)
Symbol Parameter Unit 100 500 850 1950 2400 3500
G OIP3 P 1dB IRL ORL S 21 NF
Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
V= V VSS =88V R = 39 Ohms R BIAS = 39 Ohms
BIAS L
dB dB m dB m dB dB dB dB
20.5 36.3 19.8 29 27 22 4.1
S
20.2 35.8 19.8 27 21 22 4.3
L
19.9 36.0 19.7 25 17 23 4.2
18.0 34.0 19.5 20 11 23 4.5
17.1 32.7 18.8 17 11 23 ----
15.3 30.9 17.1 11.8 11 23 ----
Test Conditions: Test Conditions:
I 80 mA Typ. IDD==80 mA Typ. TTL = 25C = 25C
OIP Tone Spacing MHz, Pout per tone dBm OIP3 3Tone Spacing ==11MHz, Pout per tone ==00dBm ZZS = ZL =50 Ohms = Z = 50 Ohms
Absolute Maximum Ratings
Noise Figure vs. Frequency 6 Noise Figure (dB) 5 4 3 2 0 0.5 1 1.5 Frequency (GHz) 2
+25c -40c +85c
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max Operating Dissipated Power Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Absolute Limit
130 mA
6V +17 dBm 0.65 W
+150C -40C to +85C +150C
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l
O 3 vs. Frequency IP 38 36 OIP3 (dBm) 34 32 30 28 26 0 0.5 1 1.5 2 2.5 3 3.5
+25c -40c +85c
P1dB vs. Frequency 21 20 P1dB (dBm) 19 18 17 16 15 0 0.5 1 1.5 2 2.5 3 3.5
+25c -40c +85c
Frequency (G z) H
303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC
2
Frequency (GHz)
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
|S11| vs. Frequency
0
25
|S21| vs. Frequency
-10 s11 (dB) s21 (dB)
+25c -40c +85c
20
15
-20
10
+25c
-30
5
-40c +85c
-40 0 1 2 3 Frequency (GHz) 4 5 6
0 0 1 2 3 4 5 6
Frequency (GHz)
|S12| vs. Frequency
-10
|S22| vs. Frequency
0
+25c -40c +85c
-15
-10 s22 (dB)
s12 (dB)
-20
-20
-25
-30
+25c -40c +85c
-30 0 1 2 3 Frequency (GHz) 4 5 6
-40 0 1 2 3 Frequency (GHz) 4 5 6
IS-95 @850M Hz Adj. Channel Pwr. vs. Channel output Pwr. -30 -35 -40 -45 -50 -55 -60 -65 -70 6 8 10 12 dBm 14
-30 -35 -40 -45 -50 -55 -60 -65 -70 6
IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power
dBc
dBc
+25c -40c +85c
+25c -40c +85c
16
8
10
12 dBm
14
16
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier Basic Application Circuit
R BIAS
1 uF 1000 pF
Application Circuit Element Values
Frequency (Mhz ) Reference Designator 500 850 1950 2400 3500
VS
CD LC
CB CD LC
220 pF 100 pF 68 nH
100 pF 68 pF 33 nH
68 pF 22 pF 22 nH
56 pF 22 pF 18 nH
39 pF 15 pF 15 nH
RF in CB
1 SBA-5089 3 2 CB
4
RF out
Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 7.5 V 33 8V 39 10 V 68 12 V 91
VS
RBIAS
Note: RBIAS provides DC bias stability over temperature.
1 uF 1000 pF Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides.
BA5
CB
LC
CD CB
Pin #
Function RF IN
Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible.
Part Identification Marking The part will be marked with an "BA5" designator on the top surface of the package. 4
1
2, 4
GND
BA5
1 2 3
2 1 3
3
RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number SBA-5089 Reel Size 7" Devices/Reel 1000
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances.
Bottom View
Side View
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-102743 Rev. C

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